EPA240D-CP083 updated 07/19/2006 high efficiency heterojunction power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2006 .050 .075 .015 .200 .220 .2900.005 .0080.001 .010 max .160 .096 2x .065 all dimensions in inches features ? non-hermetic surface mount 160mil metal ceramic package ? +32.5 dbm output power at 1db compression ? 18.5 db gain at 2 ghz ? 0.5x2400 micron rece ssed ?mushroom? gate ? si 3 n 4 passivation ? advanced epitaxial heterojunction profile provides extra high power efficiency, and high reliability electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameter/test conditions min typ max units p 1db output power at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 4.0 ghz 31.0 32.5 32.5 dbm g 1db gain at 1db compression f = 2.0 ghz vds = 8 v, ids=50% idss f = 4.0 ghz 16.0 18.5 13.5 db pae power added efficiency at 1db compression vds = 8 v, ids=50% idss f = 2.0 ghz 50 % i dss saturated drain current v ds = 3 v, v gs = 0 v 440 720 940 ma g m transconductance v ds = 3 v, v gs = 0 v 480 760 ms v p pinch-off voltage v ds = 3 v, i ds = 6 ma -1.0 -2.5 v bv gd drain breakdown voltage i gd = 2.4 ma -13 -15 v bv gs source breakdown voltage i gs = 2.4 ma -7 -14 v r th * thermal resistance 25 30 o c/w notes: * overall rth depends on case mounting. maximum ratings at 25 o c symbols parameters absolute 1 continuous 2 vds drain-source voltage 10v 8v vgs gate-source voltage -5v -3v igsf forward gate current 10.8 ma 3.6 ma igsr reverse gate current -1.8 ma -0.6 ma pin input power 29 dbm @ 3db compression tch channel temperature 175 o c 175 o c tstg storage temperature -65/175 o c -65/175 o c pt total power dissipation 5.0 w 5.0 w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
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